Pulse low-energy electron beam pumped IR-lasers based on InGaAs/AlGaAs/GaAs nanoheterostructures

Temperature dependence of threshold current density in the range 50-300 K for lasers based on InGaAs/AlGaAs/GaAs quantum-dimensional heterostructures under electron beam pumping with electron energy in the range 2-11 keV is investigated. Minimal threshold current density value as low as 0.05 A/cm
²
at the electron energy of 9-11 keV and temperature 200 K is obtained. Laser generation is obtained at record low electron energies: less than 2.5 keV at T<;150 K and 3.5 keV at T=300 K. The possibility of further reducing of electron energy at T=300 K is discussed.