InP on BiCMOS technology platform for millimeter-wave and THz MMIC

This work presents a novel InP DHBT-SiGe BiCMOS technology platform by wafer-scale heterogeneous integration. The technology provides vertical stacking of processed InP DHBT wafers directly on top of processed BiCMOS wafer with low-loss ultrabroadband interconnects up to 200 GHz. We demonstrate first MMIC operating up to 300 GHz.