Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET

We present an analytical model of 3D potential distribution for surrounding-gate (SurG) gate-all-around (GAA) MOSFET. The model is based on solution of Laplace's and Poisson's equations, where isomorphic polynomial functions are used to describe the potential distribution. The short channel effects are precisely accounted for by introducing z dependent characteristic length. From this, the device electrostatics can be calculated in the full range of bias voltage. The model compares well with numerical calculations obtained from the 3D ATLAS device simulator.