RF performance of dual metal cylindrical/surrounded gate MOSFET for high switching speed applications

In this paper, a comprehensive study on the RF performance of the dual metal gate (DMG) surrounded/cylindrical gate MOSFET (SGT/CGT) is performed using an ATLAS 3D device simulator. Further it is been compared with single metal gate (SMG) surrounded/cylindrical gate MOSFET. Simulation results reveals that the DMG CGT/SGT MOSFET with different channel length displays a significant enhancement in the drain current, maximum available power gain, maximum stable power gain, current gain and stem stability factor as compared to single metal gate. The results so obtained are, thus useful for optimizing the performance and reliability of nano-scale DMG CGT/SGT MOSFETs for high-speed logic, switching and RF applications.