ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices

Using a SiGe quantum well (QW) high mobility channel is an option for advanced PMOS Bulk finFET devices. This work presents the impact on the ESD robustness of gated nwell diodes and PMOS devices by moving from Si channels to SiGe QW channels, and by changing the device architecture from planar to bulk FinFET.