Effect of N2 addition on species kinetics in hydrogen and methane based inductively coupled pulsed plasmas

In microelectronics and microtechnology, as the semiconductor feature size decreases and pattern density increases, the industry is facing the challenge of finding new plasma processes to meet the requirement of the next devices generation. Within this scheme pulsed RF plasmas are increasingly being employed for plasma etching or deposition. Besides the interest for potential applications, pulsed plasmas combined to time resolved measurements are known to be powerful tools to study species kinetics.