Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V
_G
~ V
_D
/2). At higher V
_G
closer to V
_D
, cold and hot carrier injection to the oxide bulk defect increases and dominates at the V
_G
=V
_D
stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V
_G
and highly at V
_G
=V
_D
, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.