Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

Fully atomistic simulations for realistically extended complex devices show the best performing SS
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. The L-shaped TFETs show best performance; however, their scaling is limited by the undercut. The ON currents in UTB TFETs are limited by source-gate coupling, which can be improved by including a doping layer. NW TFETs suffer from strong confinement effects, which reduce the ON current densities significantly. Wire diameters of more than 10 nm are required to get the broken-gap band alignment.