On characteristic variability of 16-nm-gate bulk FinFET devices induced by intrinsic parameter fluctuation and process variation effect

The HKMG bulk FinFET has been one of major device technologies. However, the bulk FinFETs' characteristics has been affected to different extents by various fluctuation sources, such as random dopants (RDs), interface traps (ITs), work functions (WKs), and the process variations (PVs) [1-5]. In this work, we for the first time study the 16-nm-gate HKMG bulk FinFET's characteristic fluctuation resulting from the aforementioned random factors at the same time. By using an experimentally calibrated 3D quantum-corrected device simulation, the main findings of this study indicate the total Vth's fluctuation (σV
_th
) of the tested device is 41.1 mV, where the RDs-induced σV
_th
is the most serious one (28.5 mV) among all fluctuation sources. The coupled surface potentials cannot be simply estimated by using their statistical sum of individual random source.