Exfoliated MoTe2 field-effect transistor | IEEE Conference Publication | IEEE Xplore

Exfoliated MoTe2 field-effect transistor


Abstract:

Transition metal dichalcogenides (TMD) are materials with the form MX2 where M is a metal and X can be Se, S, or Te. These materials have covalent bonding within the laye...Show More

Abstract:

Transition metal dichalcogenides (TMD) are materials with the form MX2 where M is a metal and X can be Se, S, or Te. These materials have covalent bonding within the layers and Van der Waals bonding between the layers [1]. Unlike graphene, the existence of a band gap eliminates the need to form nanoribbons for two-dimensional crystal tunnel field-effect transistors (TFETs). Among TMDs, molybdenum ditelluride MoTe2 has the lowest band gap (1 eV) which makes it highly suitable for TFET application. In this paper, we report the first fabrication and electrical characteristics of a MoTe2 FET, made on exfoliated multilayer crystals.
Date of Conference: 23-26 June 2013
Date Added to IEEE Xplore: 17 October 2013
ISBN Information:
Print ISSN: 1548-3770
Conference Location: Notre Dame, IN, USA

References

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