Simulation of the IGBT switching-off with the charge extraction model

The Charge Extraction Model is a high voltage IGBT model for the turn-off behaviour under extreme switching conditions to evaluate different gate driving circuits. This model is a physical founded IGBT model and considers the carrier distribution and the current profiles during the switching-off in one dimension through the device. It can be used for circuit simulations and shows some advantages in relation to standard circuit models or finite element based device ones. In this paper, the charge extraction model is used to understand the current redistribution of paralleled IGBT, to master the gate drive under variable gate current profiles and to show effects concerning the carrier distribution before turning-off.