Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations

This chapter describes the direct current characteristics of various SOI Lubistors, and also proposes equivalent circuit models that permit circuit simulations. Fundamental device models are investigated using a device simulator. It is clarified that device characteristics can be explained on the basis of the pn junction, nMOSFET, and pMOSFET operations. The proposed equivalent circuit models of the devices utilize standard SPICE circuit elements. Equivalent circuit models can be applied to evaluate the performance of various circuits. [Reproduced by permission of The Electrochemical Society. S. Wakita and Y. Omura, Device models of SOI insulated-gate p-n junction devices, Journal of Electrochemical Society, vol. 150, pp. G816-G820, 2003.]