Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors

In this chapter, the low-temperature behavior of reverse-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Step-like current dependence on reverse bias is observed even at room temperature as well as at low temperature, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation--recombination process is strongly illustrated under the reverse-biased conditions. [Copyright 2007. The Japan Society of Applied Physics. Y. Omura, Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultra-thin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors, Japanese Journal of Applied Physics, vol. 46, pp. 2968-2972, 2007.]