Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors

This chapter describes confined carrier injection phenomena in thin-SOI Lubistors fabricated on SIMOX substrates. At 28 K conductance shows step-like anomalies due to the manifestation of a two-dimensional subband system in an 8-nm-thick SOI structure at a low gate bias. Conductance shows an oscillation-like feature at a high gate bias owing to the injection mode change. These effects are examined by theoretical simulations based on quantum mechanics. [©1996 IEEE. Reprinted, with permission, from Y. Omura, Two-dimensionally confined injection phenomena at low temperatures in sub-10-nm-thick SOI insulated-gate p-n-junction devices, IEEE Transactions on Electron Devices, vol. 43, pp. 436-443, 1996.]