Effect of temperature on ballistic transport of cylindrical (10, 0) CNTFET

Carbon nanotube (CNT) shows near-ballistic transport and therefore has become a topic of extensive research. Cylindrical CNT field effect transistor (CNTFET) shows better performance than double gate CNTFETs which is simulated here self-consistently using tight-binding approximation exploiting the coaxial symmetry taking intrinsic (10, 0) zigzag nanotube as channel material, doped and gate-overlapped source/drain . The effect of temperature on transport properties is examined in ballistic regime. The analysis reveals that drain current is almost independent of temperature, where the sub-threshold swing decreases significantly with temperature and transconductance falls down at lower temperature for sub-0V gate bias.