Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ~ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.