Subband-resonance oscillations in photoexcited GaAs-AlAs type-II superlattices

Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAsAlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations are due to an oscillating domain boundary between two electric-field domains.