High performance poly-Si thin film transistor with one-dimensionally long Si grains using DLB continuous-wave laser lateral crystallization

One-dimensionally very large silicon grains with a length of over 100 μm were formed by continuous-wave laser crystallization with double-line spot. The laterally crystallized Si thin films have a preferential orientation of (110) plane. Poly-Si TFTs with one-dimensionally long silicon grains were also fabricated with low-temperature (≤550°C), metal gate self-aligned process. And high electron field effect mobility of 450 cm
²
/Vs was achieved.