Reduction of hump effect of thin-film transistor by SiNx Film

The short channel effect appeared in scaled down polysilicon TFT becomes a crucial issue, as the number of the pixel increases. The influence of the very thin SiN
_x
film which is formed at the surface of the poly-Si island on the hump effect of the scaled down polysilicon thin-film transistor (TFT) is examined. It was clarified that the SiN
_x
film with a thickness of 1.7 nm which was formed at the interface between the poly-Si source/drain and Al electrode suppressed the hump characteristics of TFT. It is thought that the fixed charge in the SiN
_x
film suppressed the formation of the parasitic channel in the poly-Si edge.