Efficiency improvement of GaN light emitting diodes on Si by double island growth method

This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×10
⁹
cm
^-2
. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.