1 W A1InGaN based green laser diodes

The AlInGaN based green laser diodes were grown on c face GaN substrates by a metal organic chemical vapor deposition method. As a result, we succeeded in demonstrating 1W 525 nm Green LDs. The optical output power, voltage and the wall-plug efficiency at the forward current of cw 1.5 A were 1.01 W, 4.76 V and 14.1% at 25°C, respectively. The lifetime was estimated to be over 15,000 h by the lifetime test which was carried out under the condition of a constant current of 1.5 A at 50°C for 1000 h.