Study of process influences on the break down limit of high voltage transistors in an embedded EEPROM CMOS technology by using EMMI and nanoprobing

High voltage transistors (HV) are key devices to achieve the required high programming voltages in charge pumps and HV interfaces of EEPROM memory cells used for RFID applications. The combined use of EMMI, nanoprobing and wafer in-line monitoring on test structures was used to investigate the limits of low Breakdown (BD) voltages of these transistors in an embedded EEPROM CMOS 0.35μm technology.