Capacitor dielectric defect or damage localization by photon emission microscopy with the combination of OBIRCH

There are many failure analysis cases induced by the failed capacitor dielectric. The capacitor dielectric defect or damage is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of OBIRCH are very effective to localize the failed spot in the capacitor dielectric, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the failed spot in a capacitor dielectric accurately and quickly by photon emission microscopy with the combination of OBIRCH.