Transverse domain wall formation in a free layer: A mechanism for switching failure in a MTJ-based STT-MRAM

We investigate the switching failure probability in a MTJ-based STT-MRAM as a function of the switching current value and the pulse duration by means of extensive micromagnetic simulations. We analyze a new failure mechanism for switching through the formation and pinning of the transverse domain wall in the free layer of the STT-MRAM cell.