Charge pumping in floating-body SOI FinFETs

We review recent work that shows that reliable estimates of process- and radiation-induced interface-trap density can be obtained for conventional floating-body SOI FinFETs without body contacts. A modified charge pumping technique provides estimates of interface-trap density without detailed analysis, adjustable fitting parameters, and/or device simulation for devices in which the gate length is less than ~100 nm and the fin width is less than ~70 nm. Charge pumping currents are approximately linear with frequency up to ~300 kHz for the devices and measurement conditions used in this study.