Application of photoemission microscopy (PEM) and Computer Aided Design (CAD) navigation system in localization of high side power switch open contact failure

Photoemission microscopy (PEM) combined with Computer Aided Design (CAD) navigation system are very effective methods for fault localization on complex integrated circuit (IC) consisting of digital, analog and power devices elements. In this paper, both of these methods are applied in analyzing a high side power switch diagnostic function failure.