Building the electrical model of the pulsed photoelectric laser stimulation of a PMOS transistor in 90nm technology

This paper presents measurements of pulsed photoelectrical laser stimulation of a PMOS transistor in 90 nm technology. The laser power was able to trig three PNP parasitic bipolar transistors Drain/Nwell/Source, Drain/Nwell/Psubstrate and Source/Nwell/Psubstrate. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.