AlGaInP-Based LEDs With AuBe-Diffused AZO/GaP Current Spreading Layer

We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68×10
^-4
to 1.52×10
^-4
Ω-cm
²
by performing rapid thermal annealing at 400
^°
C for 5 min in N
₂
ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.