A comparison of the performance and reliability of wet-etched and dry-etched a-Si:H TFTs

In this work, we compare the performance of wet-etched and dry-etched a-Si:H TFTs. We find that wet-etching of the a-Si:H layer increases the TFT mobility and reduces the threshold voltage. Furthermore, wet-etched TFTs display improved reliability characteristics in response to gate-bias stress. Our experiments indicate that there exists residual plasma-induced damage in dry-etched TFTs, even after a long post-etching annealing step.