Noise modeling issues of nanoscale multi-gate FETs

White noise in sub 10 nm MOSFET devices is a crucial parameter for the design of low noise high frequency IC's and for the readout capability of sensors. To create a SPICE type model explaining recent experimental results one should take into account the ballistic nature of the carriers' transport in the channel. Rather than thermal noise originating in the channel, one should focus on the diffusive nature of the carriers near the contacts leading to a suppressed shot type white noise, as that produced in a thermionic diode.