Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions

Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes place a sharp growth of the excess low-frequency noise near the threshold of the development of the instability originated by the uncontrollable process of the impact ionization. It is found that the spectrum of the excess low-frequency noise in the pre-threshold region manifests the 1/f behavior in the frequency region 0.1 ÷ 1 GHz.