Terahertz current noise in n+nn+ diodes

We present an analytical model for the calculation of the spectral density of current fluctuations in n
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nn
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diodes at high frequency. The model takes into account the synchronous motion of the free carriers in each region of the structure, the so-called “returning” carriers and the plasma resonances at the n
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n homojunctions. The current noise spectrum exhibits resonances in the terahertz domain which are discussed and analyzed for different total lengths of the diode and different materials.