Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

We report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length L
_CH
down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance G
_m,int
of 573 μS/μm at V
_DS
of -1.0 V for GeSn pFETs.