High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

We demonstrate for the first time, Si
1−x
Ge
x
channel trigate PFETs on insulator with aggressively scaled fin width W
FIN
, gate length L
G
, and high-K/metal-gate stack (inversion oxide thickness T
INV
= 1.5 nm) using an implant-free raised source/drain (RSD) process. We report excellent electrostatic control down to L
G
= 18 nm for W
FIN
≤ 18 nm. Using an optimized RSD process, we achieved high-performance SiGe-channel PFETs with oncurrent I
ON
= 1.1 mA/µm at off-current I
OFF
= 100 nA/µm and supply voltage V
DD
= 1 V, which is attributed to high hole source injection velocity v
x0
exceeding 1 × 10
⁷
cm/s.