AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9
${\rm mm}^{2}$
exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6
$\mu{\rm A}$
at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge
$(Q)_{rr}$
of GaN-SBD is one twentieth of Si-diode at 175
$^{\circ}{\rm C}$
.