V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 45~64 GHz. The noise figure is about 20 dB, IP1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.