A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz

A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with f
_T
/f
_MAX
of 260/320 GHz, a high breakdown (HB) HBT with BV
_CEO
of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.