Impact of precursors choice on characteristics of PEALD SiN for spacer applications

As transistor size continues to shrink, the need for conformal spacer which is insensitive to loading condition arises. Previously we have reported improved device characteristics for transistors with PEALD SiN spacer compared to those with CVD SiN spacer. In this work characteristics of PEALD SiN spacer deposited with liquid or gas precursors is studied. Good device properties are obtained with both precursor types, with slightly better iso-loading characteristics for devices with SiN deposited using liquid precursor.