Novel thin-film piezoelectric aluminum nitride rate gyroscope

A new type of gyroscope that utilizes piezoelectric, thin-film, sputter-deposited aluminum nitride (AlN) as both structural and active material is demonstrated. Advantages of this approach are the capability to integrate several types of sensors and RF resonators on one chip in a post-CMOS compatible fabrication process and the potential of an all-AlN device to operate at high temperatures. A method to drive and sense specific resonance mode shapes by patterning the top electrode is explained and electrical and rate sensing performance characteristics of the device are stated.