Hydrogen effects on GaAs microwave semiconductors

This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications.