Through silicon via admittance field solver with system level capacity: Application

A new methodology has been proposed for the accurate and efficient admittance (capacitance/conductance) characterization of three dimensional (3D) interconnects. Its accuracy lies at the use of the method of moments for the characterization of the unknown quantities. The compact representation of unknowns and the derivation of closed form expressions for all the coefficients of the method of moments linear system lead to a very computationally efficient implementation. In this paper, we provide experimental support to the previous claims for the study of the capacitance/conductance of 3D interconnects. Our examples dwell with sensitivity to frequency, depletion region effects, and placement.