Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al
₂
O
₃
/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V
_th
), subthreshold swing, I
_ON
/I
_OFF
ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, ~10
⁶
, and 8.4 cm
²
/V·s, respectively. A positive V
_th
shift of 2.25 V is achieved after 1-ms programming at 10 V, whereas a negative V
_th
shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.