MBIR for in-line doping metrology of epitaxial SiGe:B and SiC:P layers

This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layers. MBIR correlation to comparative techniques is demonstrated on multiple wafer sets, including product wafers on bulk silicon and FD-SOI (Fully Depleted Silicon On Insulator) substrates. The results obtained demonstrate that MBIR is a suitable measurement technique for the in-line monitoring of doping for epitaxial SiGe:B and SiC:P layers.