The ways of silicon carbide usage in field-emission devices: The technological aspect

In general cold field emission of SiC and other cathodes are compared. Possible applications of SiC for field emission cathodes and some of technological methods are considered. Also our results on the CVD-manufactured P-doped SiC-films are presented. Lastly our results on the ion-synthesized SiC-nanoinclusions in the silicon surface layer are discussed.