CMOS MAPS in a homogeneous 3D process for charged particle tracking

This work is concerned with the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for a possible future upgrade of the SuperB-Layer0, is provided through a complete characterization of the prototypes, including tests with infrared (IR) laser,
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Fe and
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Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.