Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

Germanium-tin (GeSn) n-channel MOSFETs with low temperature (370 °C) Si surface passivation were demonstrated for the first time. With Si passivation, a higher drive current is achieved for Ge
_0.976
Sn
_0.024
nMOSFETs as compared to devices with GeSnO
₂
passivation. In addition, the effect of forming gas anneal (FGA) was investigated. FGA improves the gate dielectric interface quality, leading to improvement of subthreshold swing S.