Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric

The TaN/HfON/GeO
2
/n-Ge pMOSFETs were fabricated with different formation processes of GeO
2
interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO
2
grown by H
2
O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm
²
/V*s.