Radiation response of single and dual junction p/sup +/n InGaP/GaAs space solar cells

The radiation response of single and dual-junction p/sup +/n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented.