Preparation of high-quality /spl mu/c-Si:H films by a hydrogen-radical CVD method [solar cells]

Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.