Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET

This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T
_fin
) and gate oxide thickness (t
_ox
) are varied and the performance such as threshold voltage (V
_th
), subthreshold swing (SS), on current (I
_on
), off current (I
_off
) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T
_fin
of 3nm, t
_ox
of 1.5nm and fin height (H
_fin
) of 7nm has higher I
_on
and lower I
_off
.